Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMT's by means of an InP etch stop layer

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 227-230

  Meneghesso, Gaudenzio ^a   Buttari, Dario ^a   Perin, Enrico ^a   Canali, Claudio ^a   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FREQUENCY MEASUREMENT; ETCHING; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSCONDUCTANCE;

ETCH STOP LAYERS; HOT-ELECTRON DEGRADATION; KINK EFFECT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032257646     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)