Optimum design and fabrication of InAlAs/InGaAs HEMT's on GaAs with both high breakdown voltage and high maximum frequency of oscillation

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1312-1318

  Higuchi, Katsuhiko ^b   Matsumoto, Hidetoshi ^b   Mishima, Tomoyoshi ^b   Nakamura, Tohru ^a,b  

^a IEEE

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCY OF OSCILLATION;

CAPACITANCE; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTANCE; GATES (TRANSISTOR); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032675548     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772470     Document Type: Article

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