Fluorine atoms in AlAs, GaAs, and InAs: Stable state, diffusion, and carrier passivation

Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 3, 2000, Pages 1821-1827

  Taguchi, Akihito ^a   Ohno, Takahisa ^b   Sasaki, Taizo ^b  

^a NTT Basic Research Laboratories   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000182824     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.62.1821     Document Type: Article

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