Suppression of drain conductance dispersion in InP-based HEMTs for broadband optical communication systems

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 189-192

  Okamoto, Naoya ^a   Takahashi, Tsuyoshi ^a   Imanishi, Kenji ^a   Sawada, Ken ^a   Hara, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND NETWORKS; ELECTRIC CONDUCTANCE; ENERGY GAP; FREQUENCIES; IMPACT IONIZATION; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM PHOSPHIDE;

BROADBAND OPTICAL COMMUNICATION SYSTEMS; DRAIN CONDUCTANCE DISPERSION; INDIUM PHOSPHIDE BASED HIGH ELECTRON MOBILITY TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035716240     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)