High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts

IEEE Electron Device Letters

Volumn 17, Issue 11, 1996, Pages 540-542

  Shealy, J B ^a,b   Matloubian, M ^a,b   Liu, T Y ^b   Thompson, M A ^b   Hashemi, M M ^a,c   Denbaars, S P ^d   Mishra, U K ^a,d  

^a IEEE

^b Hughes Aircraft Co   (United States)

^c NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^d University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CAPACITY; COMPOSITE MATERIALS; COMPOSITION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

COMPOSITE CHANNEL; CONTACT TRANSFER RESISTANCE; HIGH PERFORMANCE SUBMICROMETER GATELENGTH; REGROWN OHMIC CONTACTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030287954     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.541774     Document Type: Article

References (5)

1. A. Palevski, P. Solomon, T. F. Kuech, and M. A. Tischler, "Regrown ohmic constacts to thin GaAs layers and two-dimensional electron gas," Appl. Phys. Lett., vol. 56, no. 2, 1990.
2. J. B. Shealy, M. M. Hashemi, K. Kiziloglu, S. P. Denbaars, U. K. Mishra, T. K. Liu, J. J. Brown, and M. Lui, "High breakdown-voltage AlInAs/GaInAs junction modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD," IEEE Electron Device Lett., vol. 14, pp. 545-547, no. 12, 1993.
3. T. Enoki, K. Arai, A. Kohzen, and Y. Ishii, "InGaAs/InP double channel HEMT on InP," in IPRM, 1992, pp 14-17.
4. L. M. Jelloian, M. Matloubian, T. Liu, M. Liu, and M. A. Thompson, "InP-based HEMT's with AlInP Schottky layers," IEEE Electron Device Lett., vol. 15, no. 5, pp 172-174, 1994.
5. M. Matloubian, T. Liu, L. M. Jelloian, M. A. Thompson, and R. A. Rhodes, "K-band GaInAs/InP channel power HEMT's" Electron. Lett., vol. 31, no. 9, pp 761-762, 1995.