Ga0.47In0.53As/InP HEMTs with novel GaP0.35Sb0.65 Schottky layers grown by MOVPE

Annual Device Research Conference Digest

Volumn , Issue , 1998, Pages 32-33

  Matloubian, Mehran ^a   Docter, Daniel ^a   Nguyen, Chanh ^a   Liu, Takyiu ^a   Bui, Steven ^a   Ngo, Catherine ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

BANDGAP; CONDUCTION BAND; HALL MEASUREMENT; LATTICE MATCHING; SCHOTTKY LAYERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032317532     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)