A new gate current extraction technique for measurement of on-state breakdown voltage in HEMT's

IEEE Electron Device Letters

Volumn 19, Issue 11, 1998, Pages 405-407

  Somerville, Mark H ^b   Blanchard, Roxann ^b   Del Alamo, Jesús A ^a,b   Duh, George ^c   Chao, P C ^a,c  

^a IEEE

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c BAE SYSTEMS   (United States)

Author keywords

Electric breakdown; Impact ionization; Measurement; MESFET's; MODFET's

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC GROUNDING; GATES (TRANSISTOR);

DRAIN CURRENT; GATE CURRENT EXTRACTION TECHNIQUES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032204065     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.728894     Document Type: Article

References (10)

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