Parasitic effects and long term stability of InP-based HEMTs

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1715-1720

  Meneghesso, G ^a   Luise, R ^a   Buttari, D ^a   Chini, A ^a   Yokoyama, H ^b   Suemitsu, T ^b   Zanoni, E ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000659981     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00168-2     Document Type: Article

References (8)

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2. Enoki T., Arai K., Kohzen A. and Y. Ishii, InGaAs/InP double channel HEMT on InP, Proc. of Int. Symp. on Indium Phosphide and Rel. Mat. p. 371, 1992.
3. Menozzi R., Borgarino M., Baeyens Y., Van Hove M. and Fantini F., On the Effects of Hot Electrons on the DC and RF Characteristics of Lattice-Matched InAlAs/InGaAs/InP HEMTs, IEEE Microw. and Guided Wave Lett. (7), p. 3, 1997.
4. Wakita A. S., Rohdin H., Su C. Y., Moll N., Nagy A. and Robbinset V. M. , Drain Resistance Degradation Under Ultra High Fields in AlInAs/GaInAs MODFETs, Proc. of Int. Symp. on Indium Phosphide and Rel. Mat. p.376, 1997.
5. Kruppa W. and Boos J. B., Low-Frequency Trasconductance Dispersion in InAlAs/InGaAs/InP HEMT's with Single- and Double-Recessed Gate Structures, IEEE Trans, on El. Dev. (44) p. 687, 1997.
6. Georgescu B., Py M. A., Soufi A., Post G. and Guillot G., New Aspect and Mechanism of Kink Effect in InAlAs/InGaAs/InP Inverted HFET's, IEEE El. Dev. Lett. (19), p. 154, 1998.
7. Suemitsu T., Enoki T., Tomizawa M., Shigekawa N. and Ishii Y., Mechanisms and Structural dependence of kink phenomena in InAlAS/InGaAs HEMTs, Proc. of Int. Symp. on Indium Phosphide and Rel. Mat. p.365, 1997.
8. Wang H., Ng G.I., Gilbert M., O'Sullivan P.J., Suppression of I-V kink in doped channel InAlAs/InGaAs/InP heterojunction field-effect transistor (HFET) using silicon nitride passivation, IEE El.Lett. (32), p. 2026, 1996.