Correlation between hot-electron-stress-induced degradation and cathodoluminescence in InP-based HEMTs

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 289-293

  Salviati, G ^a   Armani, N ^a   Cova, P ^b   Meneghesso, G ^c,d   Zanoni, E ^c,d  

^a CNR   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

^d INFM   (Italy)

Author keywords

Electrical degradation; InAlAs InGaAs InP HEMTs; Low temperature spectrally resolved cathodoluminescence

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL LATTICES; ELECTRIC FIELD EFFECTS; ELECTRON TRAPS; GATES (TRANSISTOR); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRESSES;

ELECTRICAL DEGRADATION; INDIUM ALUMINUM ARSENIDE; LATTICE MATCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035932285     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00643-7     Document Type: Article

References (18)