Low-Noise HEMT Using MOCVD

IEEE Transactions on Microwave Theory and Techniques

Volumn 34, Issue 12, 1986, Pages 1522-1527

  Tanaka, Kuninobu ^a   Ogawa, Masamichi ^a   Togashi, Kou ^a   Takakuwa, Hidemi ^a   Ohke, Hajime ^a   Kanazawa, Masayoshi ^a   Kato, Yoji ^a   Watanabe, Seiichi ^a  

^a Sony Corporation Semiconductor Network Company   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84914893192     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1986.1133573     Document Type: Article

References (8)

1. K. Joshin et. al., “Low-noise HEMT with self-aligned gate structure,” in Extended Abstracts of the 16th Conf. on Solid State Devices and Materials, 1984, pp. 347–350.
2. M. Laviron et. al., “Ultra low-noise and high frequency operation of TEGFET made by MBE,” Physics, vol. 129b, pp. 376-379, 1985.
3. K. Shibata, B. Abe, H. Kawasaki, S. Hori, and K. Kamei “Broadband HEMT and GaAs FET amplifiers for 18 - 26.5 GHz,” IEEE MTT-S Digest, June 1985, pp. 547–550.
4. H. Takakuwa, et. al., “Low-noise microwave HEMT using MOCVD,” IEEE Trans. Electron Devices, vol. ED-33, pp. 595–600, May 1986.
5. H. Fukui, “Optimal noise figure of microwave GaAs MESFET’s,” IEEE Trans. Electron Devices, vol. ED-26, pp. 1032–1037, July 1979.
6. M. Sholley et. al., “36.0-40.0 GHz HEMT low-noise amplifier,” IEEE MTT-S Digest, June 1985, pp. 5455–558.
7. U. K. Mishira, S. C. Palmateer, P. C. Chao, P. M. Smith, and J. C. M. Hwang, “Microwave performance of 0.25-micron gate length high electron mobility transistors,” IEEE Electron Device Lett. vol. EDL-6, pp. 142–145, Mar. 1985.
8. K. Kamei et. al., “Low-noise high electron mobility transistor,” in GaAs and Related Compounds Symp., 1984, pp. 545–550.