Optimal Noise Figure of Microwave GaAs MESFET's

IEEE Transactions on Electron Devices

Volumn 26, Issue 7, 1979, Pages 1032-1037

  Fukui, Hatsuaki ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES; SEMICONDUCTOR DEVICES, MIS;

TRANSISTORS, FIELD EFFECT;

EID: 0018490967     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1979.19541     Document Type: Article

References (11)

1. IRE Standards on Electron Tubes, pt. 9, Noise in Linear Two-ports, ports, 1962.
2. H. Fukui, “The noise performance of microwave transistors,” IEEE Trans. Electron Devices, vol. ED-13, pp. 329–341, Mar. 1966.
3. A. van der Ziel, “Thermal noise in field-effect transistors,” Proc. IRE, vol. 50, pp. 1808–1812, Aug. 1962.
4. ―, “Gate noise in field-effect transistors at moderately high frequencies,” Proc. IEEE, vol. 51, pp. 462–467, Mar. 1963.
5. W. Shockley, “A unipolar field-effect transistor,” Proc. IRE, vol. 40, pp. 1365–1376, Nov. 1952.
6. C. A. Liechti, “Microwave field-effect transistors-1976,” IEEE Trans. Microwave Theory Tech., vol. MTT-24, pp. 279–300, June 1976.
7. R. A. Pucel, H. A. Haus, and H. Statz, “Signal and noise properties of gallium arsenide microwave field-effect transistors,” in Advances in Electronics and Electron Physics, vol. 38. New York: Academic Press, 1975, pp. 195–265.
8. C. A. Liechti, E. Gowen, and J. Cohen, “GaAs microwave Schottky-gate FET,” in IEEE ISSCC Dig. Tech. Papers, pp. 158-159,1972.
9. B. S. Hewitt, H. M. Cox, H. Fukui, J. V. DiLorenzo, W. O. Schlosser, and D. E. Iglesias, “Low-noise GaAs MESFETs: Fabrication and performance,” in Gallium Arsenide and Related Compounds (Edinburgh) 1976 (Conf. Ser. 33a, The Institute of Physics, Bristol and London, England, 1977), pp. 246–254.
10. H. Fukui, “Determination of the basic device parameters of a GaAs MESFET,” Bell Syst. Tech. J., vol. 58, pp. 771–797, Mar. 1979.
11. ―, “Channel current limitations in GaAs MESFETs,” accepted for publication in Solid-State Electron.