Self-Consistent GaAs FET Models for Amplifier Design and Device Diagnostics

IEEE Transactions on Microwave Theory and Techniques

Volumn 32, Issue 12, 1984, Pages 1573-1578

  Curtice, Walter R ^a   Camisa, Raymond L ^a  

^a SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343533020     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1984.1132896     Document Type: Article

References (9)

1. R. L. Vaitus, “Uncertainty in the values of GaAs MESFET equivalent circuit elements extracted from measured two-port scattering parameters,” presented at 1983 IEEE Cornell Conference on High Speed Semiconductor Devices and Circuits, Cornell Un., Aug. 1983.
2. R. A. Speciale, “A generalization of the TSD network-analyzer calibration procedure, covering n-port scattering-parameter measurements, affected by leakage errors,” IEEE Trans. Microwave Theory Tech., vol. MTT-25, pp. 1100–1115, Dec. 1977.
3. B. Bianco et al. “Launcher and microstrip characterization,” IEEE Trans. Instrum. Meas., vol. IM-25 no. 4, pp. 320–323.
4. C. Tsironis and R. Meierer, “Microwave wide-band model of GaAs dual gate MESFET’s,” IEEE Trans. Microwave Theory Tech., vol. MTT-30, pp. 243–251, Mar. 1982.
5. H. Fukui, “Determinations of the basic parameters of a GaAs MESFET,” Bell Syst. Tech. J., vol. 58, no. 3, Mar. 1979.
6. G. C. Taylor et al. “GaAs power field-effect transistors for K-band operation,” RCA Rev., vol. 42, no. 4, pp. 508–521, Dec. 1981.
7. F. Diamond and M. Laviron, “Measurement of the extrensic series elements of a microwave MESFET under zero current conditions,” in Proc. 12th European Microwave Conf., (Finland), Sept. 1982.
8. SUPER-COMPACT, Linear Circuit Analysis and Optimization, Compact Engineering, Palo Alto, CA, 1981.
9. W. R. Curtice, “The performance of submicron gate length GaAs MESFETs,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1693–1699, Dec. 1983.