Equivalent-Circuit Parameter Extraction for Cold Gaas Mesfet's

IEEE Transactions on Microwave Theory and Techniques

Volumn 39, Issue 7, 1991, Pages 1243-1247

  Anholt, R ^a   Swirhun, S ^b  

^a Gateway Modeling Inc ^*  (United States)

^b HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORKS--EQUIVALENT CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS, FIELD EFFECT;

COLD-FET METHOD; PARAMETER EXTRACTION; PARASITIC RESISTANCES;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026185658     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.85396     Document Type: Article

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