Low-noise properties of dry gate recess etched InP HEMT's

IEEE Electron Device Letters

Volumn 17, Issue 10, 1996, Pages 482-484

  Duran, Halit C ^a,b   Klepser, Bernd Ulrich H ^b   Bächtold, Werner ^a,b  

^a IEEE

^b ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAIN; WET ETCHING;

DRY ETCHING; FABRICATION; FREQUENCIES; GATES (TRANSISTOR); INTEGRATED CIRCUITS; MILLIMETER WAVE DEVICES; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SIGNAL NOISE MEASUREMENT; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030269592     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.537082     Document Type: Article

References (12)

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