Super Low-Noise Hemts With A T-Shaped Wsix GATE

Electronics Letters

Volumn 24, Issue 21, 1988, Pages 1327-1328

  Hanyu, I ^a   Asai, S ^a   Nunokawa, M ^a   Joshin, K ^a   Hirachi, Y ^a   Ohmura, S ^a   Aoki, Y ^a   Aigo, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Semiconductor devices and materials; Transistors

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS--APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS;

GATE RESISTANCE; LOW NOISE HEMT; NOISE FIGURE; QUARTER MICRON GATE; SOURCE-GATE DISTANCE;

TRANSISTORS;

EID: 0024091911     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19880902     Document Type: Article

References (9)

1. iWAKUNi, м., et ai: 'A 20 GHz Peltier-cooled low noise HEMT amplifier'. MTT-S digest, 1985, pp. 551-553
2. KASUGA, т.: 'Cryogenically cooled K-band high electron mobility transistor receiver for radio astronomical observation', Rev. Sci. Instrum., 1987,58, pp. 279-382
3. MATSUMURA, m.: 'Submicrometre lift-off line with T-shaped cross-sectional form', Electron. Lett., 1981,17, pp. 429-430
4. TODOKORO, Y.: 'Double-layer resist films for submicrometer electron-beam lithography', IEEE Trans., 1980, ED-27, pp. 14431448
5. KATSUKAWA, к.: 'Reliability of the gate metallization in power MESFETs'. 22nd ann. proc. reliability physics, 1984, pp. 59-62
6. YOKOYAMA, N.: 'A GaAs 1 К static RAM using tungsten silicide gate self-aligned technology', IEEE J. Solid-State Circ., 1983, SC-18, pp. 520-524
7. ASAi, s.: 'Super low-noise HEMTs with a T-shaped gate structure'. MTT-S digest, 1987, pp. 1019-1022
8. Joshin, к.: 'Low noise HEMT with self-aligned gate structure'. Proc. 16th int. conf. on solid state devices and materials, Aug. 1984, pp. 347-350
9. HiKOSAKA, к.: 'Selective dry etching of AlGaAs-GaAs heterojunction', Jpn. J. Appl. Phys., 1981, 20, pp. L847-L850