On the Speed and Noise Performance of Direct Ion-Implanted GaAs MESFET’s

IEEE Transactions on Electron Devices

Volumn 40, Issue 1, 1993, Pages 9-17

  Laskar, Joy ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b UNIVERSITY OF HAWAII   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; ELECTRONIC PROPERTIES; HIGH ELECTRON MOBILITY TRANSISTORS; ION IMPLANTATION; MICROWAVE MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; TRANSPORT PROPERTIES;

CRYOGENIC TEMPERATURE MICROWAVE MEASUREMENTS; CURRENT GAIN CUTOFF FREQUENCY; HIGH-FIELD VELOCITY; HIGH-SPEED PERFORMANCEE; NOISE FIGURE; TWO-DIMENSIONAL ELECTRON GAS; ULTRA-LOW-NOISE PERFORMANCE;

MESFET DEVICES;

EID: 0027224689     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.249417     Document Type: Article

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