W-Band Low-Noise InAlAs/InGaAs Lattice-Matched HEMT’s

IEEE Electron Device Letters

Volumn 11, Issue 1, 1990, Pages 59-62

  Chao, P C ^a   Tessmer, A J ^a   Duh, Kuang Hann G ^a   Ho, Pin ^a   Kao, Ming Yih ^a   Smith, Phillip M ^a   Ballingall, James M ^a   Liu, S M J ^a   Jabra, A A ^a  

^a GENERAL ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NOISE, SPURIOUS SIGNAL--MEASUREMENTS; SEMICONDUCTING ALUMINUM COMPOUNDS--APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS--APPLICATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS (HEMT); LOW NOISE APPLICATIONS; MAXIMUM EXTRINSIC TRANSCONDUCTANCE; NOISE FIGURE;

TRANSISTORS;

EID: 0025246862     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.46931     Document Type: Article

References (7)

1. P. C. Chao et al., “94 GHz low-noise HEMT,” Electron. Lett., vol. 25, p. 504, Apr. 1989.
2. P. C. Chao, P. Ho, K. H. G. Duh, P. M. Smith, and J. Ballingall, “Very low-noise 0.15 μm InGaAs/GaAs pseudomorphic HEMT’s with 35% InAs mole fraction,” submitted for publication.
3. P. Ho et al., “Extremely high gain, low noise InAlAs/InGaAs HEMTs grown by molecular beam epitaxy,” in IEDM Tech. Dig., Dec. 1988, p. 184.
4. U. Mishra et al., “Microwave performance of AllnAs-GalnAs HEMT’s with 0.2- and 0.1-μm gate length,” IEEE Electron Device Lett., vol. 9, p. 647, Dec. 1988.
5. P. C. Chao, P. M. Smith, S. C. Palmateer, and J. C. M. Hwang, “Electron beam fabrication of GaAs low-noise MESFET’s using a new tri-layer resist technique,” IEEE Trans. Electron Devices, vol. ED-32, p. 1042, June 1985.
6. A. Brown, U. Mishra, L. E. Larson, and S. E. Rosenbaum, “The elimination of DC I-V anomalies in Ga0.47In0.53As-Al0.4sIn0.52As HEMTs,” in Gallium Arsenide and Related Compounds Conf. Proc., Sept. 1988, p. 445.
7. J. B. Kuang et al., “Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFET’s,” IEEE Electron Device Lett., vol. 9, p. 630, Dec. 1988.