0.1 μm WSiN-gate fabrication of GaAs metal-semiconductor field effect transistors using electron cyclotron resonance ion stream etching with SF6-CF4-SiF4-O2

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 2639-2642

  Jin, Yoshito ^a   Takahashi, Chiharu ^a   Nishimura, Kazumi ^a   Ono, Toshiro ^a   Matsuo, Seitaro ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0142121676     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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8. S. Sugitani, K. Yamasaki, and H. Yamazaki, Appl. Phys. Lett. 51, 806 (1987).
9. M. Nakamura, K. Iizuka, and H. Yano, Proceedings of the Dry Process Symposium, Tokyo, 1988 (The Institute of Electrical Engineers of Japan, Tokyo, 1988), p. 58.