Quarter-Micrometer Low-Noise Pseudomorphic GaAs HEMT’s with Extremely Low Dependence of the Noise Figure on Drain-Source Current

IEEE Electron Device Letters

Volumn 14, Issue 1, 1993, Pages 16-18

  Wenger, J ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HEMT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

DRAIN-SOURCE CURRENTS; GALLIUM ARSENIDE; NOISE FIGURE; QUARTER-MICROMETER HEMT;

FIELD EFFECT TRANSISTORS;

EID: 0027240749     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.215086     Document Type: Article

References (12)

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