W-band monolithic low noise AlGaAs/InGaAs pseudomorphic HEMT amplifier mounted on a small hermetically-sealed package with waveguide interface

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1995, Pages 207-210

  Itoh, Yasushi ^a   Nakayama, Masatoshi ^a   Nakahara, Kazuhiko ^a   Takagi, Tadashi ^a   Sakura, Takeshi ^a   Yoshida, Naohito ^a   Katoh, Takayuki ^a   Kashiwa, Takuo ^a   Ito, Yasuyuki ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RADIOMETERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SPURIOUS SIGNAL NOISE; WAVEGUIDES;

ADVANCED MICROWAVE SCANNING RADIOMETER; HERMETICALLY SEALED PACKAGE; MONOLITHIC LOW NOISE AMPLIFIER; WAVEGUIDE INTERFACE;

AMPLIFIERS (ELECTRONIC);

EID: 0029210683     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)