Ultra Low Noise Characteristics of AIGaAs/InGaAs/GaAs Pseudomorphic HEMT's with Wide Head T-Shaped Gate

IEEE Electron Device Letters

Volumn 16, Issue 6, 1995, Pages 271-273

  Lee, Jin Hee ^a   Yoon, Hyung Sup ^a   Park, Chul Soon ^a   Park, Hyung Moo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; DOSE SPLIT ELECTRON BEAM LITHOGRAPHY; GATE FOOTPRINT; GATE HEAD LENGTH; INDIUM GALLIUM ARSENIDE; LOW GATE RESISTANCE;

ELECTRON BEAM LITHOGRAPHY; FABRICATION; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029322367     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.790732     Document Type: Article

References (8)

1. T. Hwang, P. Chye, and P. Gregory, “Super low noise pseudomorphic InGaAs channel InP HEMTs,” Electron. Lett., vol. 29, pp. 10-11, 1993.
2. P. C. Chao, K. H. G. Duh, P. Ho, P.M. Smith, J. H. Ballingall, and A. A Jabbra, “94 GHz low noise HEMT,” Electron. Lett., vol. 25, pp. 504–505, 1989.
3. K. Hosogi, N. Nakano, H. Minami, T. Katoh, K. Nishitani, and M. Otsuo, “Photo/EB hybrid exposure process for T -shaped gate super low-noise HEMTs,” Electron. Lett., vol. 27, pp. 2011-2022, 1991.
4. P. C. Chao, P. M. Smith, S. C. Palmateer, and J. C. M. Hwang, “Electron-beam fabrication of GaAs low-noise MESFET's using a new trilayer resist technique,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1042–1046, 1985.
5. R. C. Tiberio, J. M, Limber, G. J. Galbin, and E. D. Wolf. “Electron beam lithography and resist processing for the fabrication of T -gate structures,” in Proc. SPIE, vol. 1089, pp. 124–131, 1989.
6. J. H. Lee, S. S. Choi, H. S. Yoon, C. S. Park, and H. M. Park, “Dose split method for T -shaped gate super low noise HEMTs,” submitted to Electron Lett., 1994.
7. H. Fukui, “Optimal noise figure of microwave GaAs MESFET's,” IEEE Trans. Electron Device., vol. ED-26, pp, 1032–1037, 1979.
8. A. Cappy, “Optimal noise figure of microwave GaAs,” IEEE Trans. Microwave Theory and Tech., vol. 36, pp. 1-10, 1988