Source, Drain, and Gate Series Resistances and Electron Saturation Velocity in Ion-Implanted GaAs FET's

IEEE Transactions on Electron Devices

Volumn 32, Issue 5, 1985, Pages 987-992

  Lee, Kang W ^a   Lee, Korea ^b   Shur, Michael S ^b   Vu, Tho T ^a   Roberts, Peter C T ^c   Helix, Max J ^d  

^a HONEYWELL TECHNOLOGY CENTER   (United States)

^b UNIVERSITY OF MINNESOTA   (United States)

^c University of Minnesota ^*  (United States)

^d Honeywell Systems and Research Center ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - VELOCITY ANALYZERS; SEMICONDUCTING GALLIUM ARSENIDE - ION IMPLANTATION;

ELECTRON SATURATION VELOCITY; SHORT-GATE FIELD-EFFECT TRANSISTOR; SOURCE SERIES RESISTANCE;

TRANSISTORS, FIELD EFFECT;

EID: 0022061068     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.22058     Document Type: Article

References (10)

1. P. L. Hower and N. G. Bechtel, “Current saturation and mall-signal signal characteristics of GaAs FET’s,” IEEE Trans. Electron Devices, vol. ED 20, no. 3, Mar. 1973.
2. K. W. Lee, M. S. Shur, K. Lee, T. T. Vu, P. C. T. Robert, and M. J. Helix, “Low field mobility profile in GaAs ion-implanted FET’s,” IEEE Trans. Electron Devices, vol. ED-31, pp. 39C -393, Mar. 1984.
3. H. Fukui, “Determination of the basic device parameters of a GaAs MESFET,” Bell Syst. Tech. J., pp. 711–797, Mar. 1979.
4. W. Shockley, “Research and investigation of inverse epitaxial UHF power transistors,” Rep. No. A1-TOR-64-207, Air Force Atomic Laboratory, Wright-Patterson Air Force Base, OH, Sept. 1964.
5. G. K. Reeves and H. B. Harrison, “Obtaining the specific contact resistance from transmission line model measurements,” IEEE Electron Device Lett., vol. EDL-3, no. 5, 111–113, May 1982.
6. P. Urien and D. Delagebeaudeuf, “New method for determining the series resistances in a MESFET or FEGFET,” Electron. Lett., 1983.
7. K. Lee, M. Shur, K. W. Lee, T. Vu, P. Roberts, and M. Helix,” “New interpretation of ‘end’ resistance measurements,” IEEE Electron. Device Lett., vol. EDL-5, pp. 5–7, Jan. 1984.
8. S. Chaudhuri and M. Das, “On the determination of source and drain series resistances of MESFET’s,” IEEE Electron Device Lett., vol. EDL-5, 244–246, July 1984.
9. K. W. Lee, M. S. Shur, and T. T. Vu, “New technique for measurement of electron saturation velocity in GaAs MESFET’s,” IEEE Electron Device Lett., vol. EDL-5, Oct. 1984.
10. M. Shur, “Low field mobility, effective saturation velocity and performance of submicron GaAs MESFET’s,” Electron. Lett., vol. 18, no. 21, pp. 909–910, Oct. 1982.