Dc and Microwave Characteristics of Sub-0.1-μM GatElength Planar-Doped Pseudomorphic Hemt's

IEEE Transactions on Electron Devices

Volumn 36, Issue 3, 1989, Pages 461-473

  Chao, Pane Chane ^a   Shur, Michael S ^b   Tiberio, Richard C ^c   Duh, K H George ^a   Smith, Phillip M ^a   Ballingall, James M ^a   Ho, Pin ^a   Jabra, Amani A ^a  

^a GENERAL ELECTRIC COMPANY   (United States)

^b UNIVERSITY OF MINNESOTA   (United States)

^c Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVES; SEMICONDUCTOR MATERIALS--DOPING;

CHARGE CONTROL MODELS; HIGH ELECTRON MOBILITY TRANSISTORS;

TRANSISTORS, FIELD EFFECT;

EID: 0024629435     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.19955     Document Type: Article

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