Extremely high gain, low noise InAlAs/InGaAs HEMTs grown by molecular beam epitaxy

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1988, Pages 184-186

  Ho, P ^a   Chao, P C ^a   Duh, K H G ^a   Jabra, A A ^a   Ballingall, J M ^a   Smith, P M ^a  

^a GENERAL ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS--MILLIMETER WAVES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS--GROWTH;

HIGH-ELECTRON-MOBILITY TRANSISTORS; NOISE FIGURE; SINGLE-STAGE AMPLIFIER; THREE-STAGE HEMT AMPLIFIER; TRANSCONDUCTANCE;

TRANSISTORS, FIELD EFFECT;

EID: 0024170407     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)