60-GHz Pseudomorphic A10.25Ga0.75 As/In0.28Ga0.72As Low-Noise HEMT’s

IEEE Electron Device Letters

Volumn 12, Issue 1, 1991, Pages 23-25

  Tan, K L ^a   Dia, R M ^a   Streit, Dwight C ^a   Shaw, L K ^a   Han, A C ^a   Sholley, M D ^a   Liu, P H ^a   Trinh, Tien Q ^a   Lin, Tzuenshyan ^a   Yen, H C ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS--DOPING; SEMICONDUCTING INDIUM COMPOUNDS;

I-V CHARACTERISTICS; V BAND TRANSISTORS;

TRANSISTORS, HIGH ELECTRON MOBILITY;

EID: 0026077041     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.75686     Document Type: Article

References (7)

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2. U. K. Mishra et. al., “Microwave performance of AlInAs-GaInAs HEMT’s with 0.2- and 0.1-μm gate length,” IEEE Electron Device Lett., vol. 9, no. 12, pp. 647–649, 1988.
3. N. Moll, M. R. Hueschen, and A. Fisher-Colbrie, “Pulsed doped AlGaAs/InGaAs pseudomorphic MODFET’s,” IEEE Trans. Electron Devices, vol. 35, no. 7, pp. 878–886, 1988.
4. L. D. Nguyen, D. C. Radulescu, M. C. Foisy, P. J. Tasker, and L. F. Eastman, “Influence of quantum-well width on device performance of Al0.30Ga0.70As/In0.25Ga0.75As (on GaAs) MODFET’s,” IEEE Trans. Electron Devices, vol. 36, no. 5, pp. 833–838, 1989.
5. 0.35 As/GaAs single quantum-well pseudomorphic HEMT’s,” Electron. Lett., vol. 26, no. 1, pp. 27–28, 1990.
6. A. Aust et. al., “A family of InGaAs/AlGaAs V-band monolithic HEMT LNA’s,” in Proc. GaAs IC Symp., 1989, pp. 95–98.
7. K. L. Tan, et. al., “Ultralow-noise W-band pseudomorphic InGaAs HEMT’s,” IEEE Electron Device Lett., vol. 11, no. 7, pp. 303–305, 1990.