HIGH PERFORMANCE 0. 1 mu m GATE-LENGTH PLANAR-DOPED HEMTS.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1987, Pages 410-413

  Chao, P C ^a   Smith, P M ^a   Duh, K H G ^a   Ballingall, J M ^a   Lester, L F ^a   Lee, B R ^a   Jabra, A A ^a   Tiberio, R C ^a  

^a GENERAL ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - PERFORMANCE;

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH PERFORMANCE HEMT; PLANAR-DOPED HEMT; SUBMICRON GATE LENGTH HEMT;

TRANSISTORS;

EID: 0023581466     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)