Low noise AlInAs/InGaAs HEMT using WSi ohmic contact

Electronics Letters

Volumn 30, Issue 12, 1994, Pages 1009-1010

  Yoshida, N ^a   Yamamoto, Y ^a   Katoh, K ^a   Minami, H ^a   Kitano, T ^a   Takano, H ^a   Sonoda, T ^a   Takamiya, S ^a   Mitsui, S ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

High electron mobility transistors; Ohmic contacts; Semiconductor device noise

Indexed keywords

ETCHING; LSI CIRCUITS; MONOLITHIC INTEGRATED CIRCUITS; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SIGNAL NOISE MEASUREMENT; SPURIOUS SIGNAL NOISE; THERMODYNAMIC STABILITY; TUNGSTEN COMPOUNDS;

ION SPUTTERING; LOW NOISE OPERATION; REACTIVE ION ETCHING; S PARAMETER MEASUREMENT; SEMICONDUCTOR DEVICE NOISE; TRANSCONDUCTANCE; TUNGSTEN SILICIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0028769436     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940633     Document Type: Article

References (5)

1. Wang, H., Lai, R., Chen, T. H., Chow, P. D., Velebir, J., Tan, K. L., Streit, D. C., Liu, P. H., and Ponchak, G.: ‘A monolithic W-band three-stage LNA using 0.1 μm InAlAs/InGaAs/InP HEMT technology’. 1993 IEEE MTT-S Dig., pp. 519-522
2. Duh, K. H. G., Liu, S. M. J., Kao, M. Y., Wang, S. C., Tang, O. S. A., Ho, P., Chao, P. C., and Smith, P. M.: ‘Advanced millimeter-wave InP HEMT MMIC’s’. Proc. 3rd Int. Conf. Indium Phosphide and Related Matter, 1993, pp. 493-496
3. Mishra, U. K., Jensen, J. F., Brown, A. S., Thompson, M. A., Jelloian, L. M., and Beaubien, R. S.: ‘Ultra-high-speed digital circuit performance in 0.2 μm gate-length AlInAs/GaInAs HEMT technology’, IEEE Electron. Device Lett., 1988, 9, pp. 482-484
4. Yoshida, N., Yamamoto, Y., Takano, H., Sonoda, T., Takamiya, S., and Mitsui, S.: ‘Study of ohmic contacts to AlInAs/InGaAs HEMT’s’. GaAs Rel. Workshop, San Jose CA USA, October 1993
5. Hosogi, K., Nakano, N., Minami, H., Katoh, T., Nishitani, K., and Otsubo, M.: ‘Photo/EB hybrid exposure process for T-shaped gate superlow-noise HEMT’s’, Electron. Lett., 1991, 27, pp. 2011-2012