A Super Low-Noise 0.1 um T-Gate InA1 As-InGaAs-InP HEMT

IEEE Microwave and Guided Wave Letters

Volumn 1, Issue 5, 1991, Pages 114-116

  Duh, K H G ^a   Chao, P C ^a   Liu, S M L ^a   Ho, P ^a   Kao, M Y ^a   Ballingall, J M ^a  

^a General Electri Company ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS, MICROWAVE; NOISE, SPURIOUS SIGNAL; SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS; TELECOMMUNICATION LINKS, MICROWAVE;

INDIUM ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIDE; INDIUM PHOSPHIDE; LOW NOISE HEMT; T GATE; W BAND;

TRANSISTORS, HIGH ELECTRON MOBILITY;

EID: 0026152278     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.89081     Document Type: Article

References (8)

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