High-performance Ka-B and monolithic low-noise amplifiers using 0.2-μm dry-recessed GaAs PHEMT's

IEEE Microwave and Guided Wave Letters

Volumn 6, Issue 7, 1996, Pages 253-255

  Kwon, Youngwoo ^a,b,c   Deakin, Don S ^b   Sovero, Emilio A ^a,b   Higgins, J Aiden ^a,b  

^a IEEE

^b ROCKWELL SCIENCE CENTER   (United States)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DRY ETCHING; ELECTRIC NETWORK SYNTHESIS; ELECTRON DEVICE MANUFACTURE; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PLASMA ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL TO NOISE RATIO;

DRY RECESS PROCESS; GATE RECESS; MUSHROOM GATES; ULTRA LOW NOISE AMPLIFIERS;

MICROWAVE AMPLIFIERS;

EID: 0030196592     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.502284     Document Type: Article

References (8)

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