Unusual C-V Profiles of Si-Implanted (211) GaAs Substrates and Unusually Low-Noise MESFET's Fabricated on Them

IEEE Electron Device Letters

Volumn 9, Issue 1, 1988, Pages 10-12

  Banerjee, Indrajit ^a   Chye, Patrick W ^a   Gregory, Paul E ^a  

^a Avantek Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - ION IMPLANTATION; SEMICONDUCTING SILICON; TRANSISTORS, FIELD EFFECT - FABRICATION;

C-V PROFILES; ION-IMPLANTED (211) SUBSTRATES; METAL--SEMICONDUCTOR FET (MESFET); UNUSUALLY LOW-NOISE MESFET;

SUBSTRATES;

EID: 0023839626     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.20397     Document Type: Article

References (6)

1. S. Wright, M. Inada, and H. Kroemer, “Polar-on-nonpolar epitaxy: Sublattice ordering in the nucleation and growth of GaP on Si (211) surfaces,” J. Vac. Sci. Technol., vol. 21, pp. 534–536, 1982.
2. P.N. Uppal and H. Kroemer, “Molecular beam epitaxial growth of GaAs on Si (211),” J. Appl. Phys., vol. 58, pp. 2195–2203, 1985.
3. W.I. Wang, R.F. Mark, and L. Vina, “High purity GaAs grown by molecular beam epitaxy,” J. Appl. Phys., vol. 59, pp. 937–939, 1986.
4. S. Subbana, H. Kroemer, and J.L. Merz, “Molecular beam epitaxial growth and selected properties of GaAs layers and GaAs/(Al, Ga)As superlattices with the (211) orientation,” J. Appl. Phys., vol. 59, pp. 488–494, 1986.
5. M. Feng, H. Kanber, V.K. Eu, E. Watkins, and L.R. Hackett, “Ultrahigh frequency of operation of ion-implanted GaAs metal-semiconductor field effect transistor,” Appl. Phys. Lett., vol. 44, pp. 231–233, 1984.
6. NEC data sheet NE202, California Eastern Labs, Santa Clara, CA, May 1987.