Characterization of a thin Si-implanted and rapid thermal annealed n-GaAs layer

Applied Physics Letters

Volumn 51, Issue 11, 1987, Pages 806-808

  Sugitani, Suehiro ^a   Yamasaki, Kimiyoshi ^a   Yamazaki, Hajime ^a  

^a NTT CORPORATION   (Japan)

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EID: 4143136078     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.98872     Document Type: Article

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