High-performance X-band MMIC LNAs using dry recessed PHEMTs

Electronics Letters

Volumn 33, Issue 9, 1997, Pages 817-818

  Kwon, Y ^a   Sovero, E A ^b   Deakin, D S ^b   Higgins, J A ^b  

^a Seoul National University   (South Korea)

^b ROCKWELL SCIENCE CENTER   (United States)

Author keywords

High electron mobility transistors; Microwave amplifiers; MMIC

Indexed keywords

ELECTRIC CURRENTS; EQUIVALENT CIRCUITS; ETCHING; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PERFORMANCE; PLASMAS; RESISTORS; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE; VOLTAGE CONTROL;

DC POWER CONSUMPTION; FREQUENCY DEPENDENCE; LOW NOISE AMPLIFIERS; SELECTIVE DRY RECESS PROCESS; WET GATE RECESS PROCESS;

MICROWAVE AMPLIFIERS;

EID: 5244242134     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970544     Document Type: Article

References (4)

1. LOTT, U.: 'Low DC power monolithic low noise amplifier for wireless applications at 5GHz'. Proc. IEEE Microw. Millimeter-wave Monolithic Circuits Symp., 1996, pp. 81-84
2. SHIGA, N., NAKAJIMA, S., KUWATA, N., OTOBE, K., SEKIGUCHI, T., MATSUZAKI, K., and HAYASHI, H.: 'Monolithic pulse-doped MESFET LNA for DBS downconverter'. Proc. GaAs IC Symp., 1992, pp. 127-130
3. HUGHES, B., PERDOMO, J., and KONDO, H.: '12GHz low-noise MMIC amplifier designed with a noise model that scales with MODFET size and bias', IEEE Trans. Microw. Theory Tech., 1993, 41, pp. 2311-2316
4. KWON, Y., DEAKIN, D.S., SOVERO, E.A., and HIGGINS, J.A.: 'High-performance Ka-band monolithic low-noise amplifiers using 0.2μm dry-recessed GaAs PHEMTs', IEEE Microw. Guid. Wave Lett., 1996, 6, pp. 253-255