Super low noise AlGaAs/GaAs HEMT with one tenth micron gate

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1989, Pages 423-426

  Kawasaki, Hisao ^a   Shino, Toshio ^a   Kawano, Mitsuo ^a   Kamei, Kiyoho ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS;

HIGH-ELECTRON-MOBILITY TRANSISTORS; T-SHAPED GATE;

TRANSISTORS, FIELD EFFECT;

EID: 0024925371     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)