High-performance 0.1 -//m-self-aligned-gate GaAs MESFET technology

IEEE Transactions on Electron Devices

Volumn 44, Issue 11, 1997, Pages 2113-2119

  Nishimura, Kazumi ^a,b   Onodera, Kiyomitsu ^a,b   Aoyama, Shinji ^a,b   Tokumitsu, Masami ^a,b   Yamasaki, Kimiyoshi ^a,b  

^a IEEE   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FREQUENCY MEASUREMENT; ELECTRODES; ELECTRON CYCLOTRON RESONANCE; GATES (TRANSISTOR); ION IMPLANTATION; PHOTOLITHOGRAPHY; PLASMA ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; VOLTAGE MEASUREMENT;

ANTIREFLECTION TOP COAT FILMS; CURRENT GAIN CUTOFF FREQUENCY;

MESFET DEVICES;

EID: 0031276941     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.641392     Document Type: Article

References (14)

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