60 GHz-band low noise HJFET amplifier module for wireless LAN applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1996, Pages 13-16

  Maruhashi, K ^a   Funabashi, M ^a   Inoue, T ^a   Madihian, M ^a   Kuzuhara, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; INTEGRATED CIRCUIT LAYOUT; LOCAL AREA NETWORKS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SPURIOUS SIGNAL NOISE; WAVEGUIDES;

HETEROJUNCTION FIELD EFFECT TRANSISTORS (HJFET); LOW NOISE AMPLIFIERS (LNA);

MICROWAVE AMPLIFIERS;

EID: 0029701379     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)