A New Method for Determining the FET Small-Signal Equivalent Circuit

IEEE Transactions on Microwave Theory and Techniques

Volumn 36, Issue 7, 1988, Pages 1151-1159

  Dambrine, Gilles ^a   Cappy, Alain ^a   Heliodore, Frederic ^a   Playez, Edouard ^a  

^a UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORKS - EQUIVALENT CIRCUITS; MICROWAVE MEASUREMENTS;

EQUIVALENT CIRCUIT EXTRINSIC ELEMENT; FET SMALL-SIGNAL EQUIVALENT CIRCUIT; PARASITIC CAPACITANCES; PARASITIC RESISTANCES AND INDUCTANCES; S-PARAMETERS;

TRANSISTORS, FIELD EFFECT;

EID: 0024048518     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.3650     Document Type: Article

References (10)

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3. K. W. Lee, K. Lee, M. S. Shur, Tho T. Vu, P. C. T. Roberts, and M. J. Helix, “Source, drain and gate series resistances and electron saturation velocity in ion implanted GaAs FET's,” IEEE Trans. Electron Devices, vol. ED-32, pp. 987-992, May 1985.
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7. L. Yang and S. I. Long, “New method to measure the source and drain resistance of the GaAs MESFET,” IEEE Electron Device Lett., vol. EDL-7, pp. 75-77, Feb. 1986.
8. J. Granlund, “Resistance associated with FET gate metallization,” IEEE Electron Device Lett., vol. EDL-1, pp. 151-153, Aug. 1980.
9. W. R. Curtice and R. L. Camisa, “Self-consistent GaAs FET models for amplifier design and device diagnostics,” IEEE Trans. Microwave Theory Tech., vol. MTT-32, pp. 1573-1578, Dec. 1984.
10. H. A. Willing, C. Rauscher, and P. De Santis, “A technique for predicting large-signal performance of GaAs MESFET,” IEEE Trans. Microwave Theory Tech., vol. MTT-26, pp. 1017-1023, Dec. 1978.