94-GHz 0.1-μm T-Gate Low-Noise Pseudomorphic InGaAs HEMT's

IEEE Electron Device Letters

Volumn 11, Issue 12, 1990, Pages 585-587

  Tan, K L ^a   Dia, R M ^a   Streit, Dwight C ^a   Lin, Tzuenshyan ^a   Trinh, Tien Q ^a   Han, A C ^a   Liu, P H ^a   Chow, Pei Ming D ^a   Yen, H C ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS - APPLICATIONS;

I-V CHARACTERISTICS; NOISE FIGURE; T-GATE LOW NOISE PSEUDOMORPHIC HEMT;

TRANSISTORS, HIGH ELECTRON MOBILITY;

EID: 0025588053     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.63047     Document Type: Article

References (8)

1. K. L. Tan et al., “Ultralow noise Jf-band pseudomorphic InGaAs HEMT's, ” IEEE Electron Device Lett., vol. 11, no.7,pp. 303 –305, July 1990.
2. P. C. Chao et al., “94 GHz low-noise HEMTs, ” Electron. Lett., vol. 25, no. 8, pp. 504 –505, Apr. 1989.
3. R. E. Lee, R. S. Beaubian, R. H. Norton, and J. W. Bacon, “Ultra-low-noise millimeter-wave pseudomorphic HEMT's, ” in IEEE MTT-S Tech. Dig., 1989, pp. 975 –978.
4. K. H. G. Duh et al., “W-band InGaAs HEMT low noise amplifiers, ” in IEEE MTT-S Tech. Dig., 1990, pp. 595 –598.
5. M. Aust et al., “A family of InGaAs/AlGaAs V-band monolithic HEMT LNA's, ” in GaAs IC Symp. Tech. Dig., 1989, pp. 95 –98.
6. B. Nelson et al., “Octave band InGaAs HEMT MMIC LNA's to 40 GHz, ” submitted to 1990 GaAs IC Symp.
7. H. Fukui, “Optimal noise figure of microwave GaAs MESFETs, ” IEEE Trans. Electron Devices, vol. ED-26, no. 7, pp. 1032 –1037, July 1979.
8. P. C. Chao et al., “DC and microwave characteristics of sub-O.l-nm gate length planar doped pseudomorphic HEMT's, ” IEEE Trans. Electron Devices, vol. 36, no. 3, pp. 461 –471, Mar. 1989.