High Microwave and Ultra-Low Noise Performance of Fully Ion-Implanted GaAs MESFET’s with Au/WSiN T-Shaped Gate

IEEE Transactions on Electron Devices

Volumn 40, Issue 1, 1993, Pages 18-24

  Onodera, Kiyomitsu ^a   Nishimura, Kazumi ^a   Asai, Kazuyoshi ^a   Sugitani, Suehiro ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ETCHING; FABRICATION; GOLD COMPOUNDS; ION IMPLANTATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; TUNGSTEN COMPOUNDS;

GATE RESISTANCE; HIGH MICROWAVE PERFORMANCE; OPTIMUM ANNEALING TEMPERATURE; REACTIVE ION ETCHING; SELF-ALIGNED MESFETS; ULTRA-LOW NOISE PERFORMANCE;

MESFET DEVICES;

EID: 0027239316     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.249418     Document Type: Article

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