140 GHz 0.1 mu m gate-length pseudomorphic In0.52Al0.48As/In0.60Ga0.40As/InP HEMT

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 239-242

  Tan, K L ^a   Streit, D C ^a   Chow, P D ^a   Dia, R M ^a   Han, A C ^a   Liu, P H ^a   Garske, D ^a   Lai, R ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Fabrication; Frequency; Gain; HEMTs; Indium phosphide; Millimeter wave technology; Millimeter wave transistors; MODFETs; Noise figure; Testing

Indexed keywords

ALUMINUM; ELECTRON DEVICES; FABRICATION; INDIUM PHOSPHIDE; MILLIMETER WAVES; NOISE FIGURE; RECONFIGURABLE HARDWARE; TESTING;

ASSOCIATED GAIN; DEVICE TECHNOLOGIES; FREQUENCY; GAIN; GATE LENGTH; HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS); MILLIMETER WAVE TRANSISTORS; MILLIMETER-WAVE TECHNOLOGY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84936895748     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235458     Document Type: Conference Paper

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