Pseudomorphic HEMT Manufacturing Technology for Multifunctional Ka-Band MMIC Applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 43, Issue 2, 1995, Pages 257-266

  Wu, C S ^a   Pao, C K ^a   Yau, W ^a   Kanber, H ^a   Hu, M ^a   Bar, S X ^a   Kurdoghlian, A ^a   Bardai, Z ^a   Bosch, D ^b   Seashore, C ^b   Gawronski, M ^b  

^a RAYTHEON COMPANY   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70350721470     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.348082     Document Type: Article

References (16)

1. H. Q. Tserng, B. Kim, P. Saunier, H. D. Shih, and M. A. Khatibzadeh, “Millimeter-wave power transistors and circuits,” Microwave J., pp. 125–135, Apr. 1989.
2. P. M. Smith, P. C. Chao, L. F. Lester, R. P. Smith, B. R. Lee, D. W. Ferguson, A. A. Jabra, J. M. Ballingall, and K. H. G. Duh, “InGaAs pseudomorphic HEMTs for millimeter wave power applications,” IEEE MTT-S Dig., pp. 927–930, 1988.
3. P. M. Smith, M. Y. Kao, P. Ho, P. C. Chao, K. H. G. Duh, A. A. Jabra, R. P. Smith, and J. M. Ballingall, “A 0.15 μm gate-length pseudomorphic HEMT,” IEEE MTT-S Dig., pp. 983–986, 1989.
4. P. C. Chao, P. M. Smith, K. H. G. Duh, and J. M. Ballingall, “V- and W-band power and low-noise HEMTs,” in Proc. Ext. Abstr. 21st Conf. Solid State Dev. Mat., Tokyo, 1989, pp. 277–280.
5. P. M. Smith, P. C. Chao, J. M. Ballingall, and A. W. Swanson, “Microwave and ram-wave power application using pseudomorphic HEMTs,” Microwave J., pp. 71–86, May 1990.
6. T. H. Chen, K. L. Tan, G. S. Dow, H. Wang, K. W. Chang, T. N. Ton, B. Allen, J. Berenz, P. H. Liu, D. Streit, and G. Hayashibara, “A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier,” GaAs IC Symp. Dig., pp. 71–74, 1992.
7. K. L. Tan et al., “94 GHz 0.1 μm T-gate low noise pseudomorphic InGaAs HEMTs,” IEEE Electron. Device Lett., vol. 11, pp. 585–587, 1990.
8. H. Wang, T. N. Ton, K. L. Tan, D. Garske, G. S. Dow, J. Berenz, M. W. Pospieszalski, and S. K. Pan, “A D-band monolithic low noise amplifier,” GaAs IC Symp. Dig., pp. 23–26, 1992.
9. S. Shanfield, A. Platzker, L. Aucoin, T. Kazior, B. I. Patel, A. Bertrand, W. Hoke, and P. Lyman, “One Watt, very high efficiency, 10 and 18 GHz pseudomorphic HEMTs fabricated by dry first recess etching,” IEEE MTT-S Dig., pp. 639–641, 1992.
10. J. C. Huang, G. Jackson, S. Shanfield, W. Hoke, P. Lyman, D. Atwood, P. Saledas, M. Schindler, Y. Tajimaa, A. Platzker, D. Massé, and H. Staz, “An AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for x- and ku-band power applications,” IEEE MTT-S Dig., pp. 713–716, 1991.
11. C. S. Wu el al., “High breakdown voltage power PHEMT devices processed with single gate recess and damage-free RIE techniques,” to be published.
12. A. Kurdoghlian, C. S. Wu, W. Yau, J. Chen, M. Hu, C. K. Pao. and D. Bosch, “The demonstration of Ka-band multi-functional MMIC circuits fabricated on the same PHEMT wafer with superior performance,” in IEEE Dig. Microwave & MM-Wave Monolithic Circ., pp. 97–98, 1993.
13. C. S. Wu, G. L. Lan, C. K. Pao, S. X. Bar, and M. Hu, “Pseudomorphic HEMT devices for microwave and millimeter wave applications,” published in Proc. MRS Symp.,, 1993, vol. 300, pp. 41–54.
14. C. S. Wu, M. Hu, S. X. Bar, C. K. Pao, H. Kanber, B. M. Paine, and W. Yau, “High yield pseudomorphic HEMT manufacturing technology development,” in Proc. 1993 U.S. Conf. GaAs Mfg. Technol., 1993, pp. 41–42.
15. R. Plana et al., “Noise in AlGaAs/InGaAs/GaAs pseudomorphic HEMT's from 10 Hz to 18 GHz,” IEEE Electron Device Lett., vol. 40, no. 5, May 1993.
16. C. S. Wu, K. K. Yu, M. Hu, and H. Kanber, “Optimization of Ohmic Contacts for Reliable Heterostructure GaAs Materials,” J. Electronic Materials, vol. 19, pp. 1265–1271, 1990.