Radiation-induced interface traps in hardened mos transistors : an improved charge-pumping study

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2547-2557

  Autran, J L ^a   Chabrerie, C ^a   Paillet, P ^b   Flament, O ^c   Leray, J L ^c   Boudenot, J C ^c  

^a CEA DIF   (France)

^b THALES   (France)

^c UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENT MEASUREMENT; ELECTRONIC DENSITY OF STATES; ENERGY GAP; PARAMAGNETIC RESONANCE; RADIATION EFFECTS; RADIATION HARDENING; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SILICA; SILICON ON INSULATOR TECHNOLOGY; VOLTAGE MEASUREMENT;

CHARGE PUMPING; INTERFACE TRAPS; ISOCHRONAL ANNEAL;

MOSFET DEVICES;

EID: 0030354356     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556835     Document Type: Article

References (57)

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