Three-level charge pumping study of radiation-induced defects at SiSiO2 interface in submicrometer MOS transistors

Journal of Non-Crystalline Solids

Volumn 187, Issue , 1995, Pages 211-215

  Autran, Jean Luc ^a   Balland, Bernard ^a   Babot, Daniel ^a  

^a UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84945246905     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00140-9     Document Type: Article

References (18)

1. 'Border traps' in MOS devices
2. A reliable approach to charge-pumping measurements in MOS transistors
3. Numerical calculation of low-frequency capacitance/voltage curves of m.o.s. capacitors with nonconstant doping profiles
4. Evolution of capture cross-section of radiation-induced interface traps in MOSFETs as studied by a rapid charge pumping technique