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Solid-State Electronics

Volumn 39, Issue 4 SPEC. ISS., 1996, Pages 563-570

Analytical study of the contribution of fast and slow oxide traps to the charge pumping current in MOS structures

(2) Bauza, D a Ghibaudo, G a

a Grenoble INP Phelma (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIFFERENTIAL EQUATIONS; DOPING (ADDITIVES); MATHEMATICAL MODELS; SEMICONDUCTING SILICON;

CHARGE PUMPING CURRENT; INTERFACE TRAPS; OXIDE TRAPS;

MOS DEVICES;

EID: 0030127157 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(95)00156-5 Document Type: Article

Times cited : (57)

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