The nature of interface states generated by high field injection

Microelectronic Engineering

Volumn 22, Issue 1-4, 1993, Pages 201-206

  Vuillaume, Dominique ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); MICROSCOPIC EXAMINATION; MICROWAVE SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICA;

HIGH FIELD INJECTION; INTERFACE DEFECTS;

SEMICONDUCTOR MATERIALS;

EID: 0027642635     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(93)90157-Z     Document Type: Article

References (28)

1. Generation of P[sub b] Centers by High Electric Fields: Thermochemical Effects
2. The effect of gate metal and SiO2 thickness on the generation of donor states at the Si-SiO2 interface