The application of deep level transient spectroscopy to the measurement of radiation-induced interface state spectra

IEEE Transactions on Nuclear Science

Volumn 35, Issue 6, 1988, Pages 1197-1202

  Barnes, C ^a   Zietlow, T ^a   Nakamura, K ^a  

^a AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; HEAT TREATMENT--ANNEALING; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS;

DEEP LEVEL TRANSIENT SPECTROSCOPY; SHALLOW INTERFACE STATES;

SEMICONDUCTOR DEVICES, MOS;

EID: 0024170019     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25439     Document Type: Article

References (16)

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