Modeling the anneal of radiation-induced trapped holes in a varying thermal environment

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1682-1689

  McWhorter, P J ^a   Miller, S L ^a   Miller, W M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; SEMICONDUCTOR DEVICES, MOS; THERMAL EFFECTS;

HOLE TRAPPING; TIME DEPENDENCE;

TRANSISTORS;

EID: 0025669259     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101177     Document Type: Article

References (16)

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