The Time-Dependence of Post-Irradiation Interface Trap Build-up in Deuterium-Annealed Oxides

IEEE Transactions on Nuclear Science

Volumn 39, Issue 6, 1992, Pages 2220-2229

  Saks, N S ^a   Rendell, R W ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000395740     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.211424     Document Type: Article

References (39)

1. T.R. Oldham, F.B. McLean, H.E. Boesch, Jr., and J.M. McGarrity “An Overview of Radiation-Induced Interface Traps in MOS Structures”, Semicond. Sci. Tech. 4, pp. 986-999,(1989).
2. P.S. Winokur, “Radiation-Induced Interface Traps”, Ionizing Radiation Effects in MOS Devices and Circuits”, edited by T.P. Ma and P.V. Dressendorfer, John Wiley & Sons (1989), Chapter 4.
3. F.B. McLean, “A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures”, IEEE Trans. Nucl. Sci. NS-27, p. 1651, Dec. 1980.
4. D.L. Griscom, D.B. Brown, and N.S. Saks, “Nature of Radiation-Induced Point Defects in Amorphous SiO 2 and their Role in SiO 2-on-Si Structures”, in The Physics and Chemistry of SiO 2 and the Si-SiO 2 Interface, edited by C.R. Helms and B. E. Deal, Plenum Press (1988), p. 287.
5. D.L. Griscom, “Hydrogen Model for Radiation-Induced Interface States in SiO 2-on-Si Structures: A Review of the Evidence”, J. Electron. Mat, (1992). (to be published)
6. P.J. Caplan, E.H. Poindexter, B.E. Deal, and R.R. Razouk, “ESR Centers, Interface States, and Oxide Fixed Charge in Thermally Oxidized Silicon Wafers”, J. Appl. Phys. 50, p. 5847, (1979).
7. P.M. Lenahan and P.V. Dressendorfer, “Hole Traps and Trivalent Silicon Centers in Metal/Oxide/Silicon Devices”, J. Appl. Phys. 55, p. 3495, (1984).
8. N.M. Johnson, D.K. Biegelsen, and M.D. Moyer, “Low-Temperature Annealing and Hydrogenation of Defects at the Si-SiO 2 Interface”, J. Vac. Sci. Technol. 19, p. 390, Sept. (1981).
9. K.L. Brower and S.M. Myers, “Chemical Kinetics of Hydrogen and <111 >Si-SiO 2 Interface Defects”, Appl. Phys. Letts. 57, p. 162, July (1990).
10. Y. Nissan-Cohen, “The Effect of Hydrogen on Hot Carrier and Radiation Immunity of MOS Devices”, Appl. Surf. Sci. 39, p. 511, (1989).
11. J.R. Schwank, D.M. Fleetwood, P.S. Winokur, P.V. Dressendorfer, D.C. Turpin, and D.T. Sanders, “The Role of Hydrogen in Radiation-Induced Defect Formation in Polysilicon Gate MOS Devices”, IEEE Trans. Nucl. Sci. NS-34, p. 1152, Dec. (1987).
12. N.S. Saks and J.M. Andrews, “Effects of Hydrogen Annealing on MOS Oxides”, J. Electron. Mat. 21, p. 775, (1992).
13. R.A. Kohler, R.A. Kushner, and K.H. Lee, “Total Dose Radiation Hardness of MOS Devices in Hermetic Ceramic Packages”, IEEE Trans. Nucl Sci. 35, p. 1492, Dec. (1988).
14. R.E. Stahlbush. B.J. Mrstik, and R.K. Lawrence, “Post-Irradiation Behavior of the Interface State Density and the Trapped Positive Charge”, IEEE Trans. Nucl. Sci. 37, p. 1641, Dec. (1990).
15. B.J. Mrstilc and R.W. Rendell, “Si-SiO 2 Interface State Generation during x-ray Irradiation and during Post-Irradiation Exposure to a Hydrogen Ambient”, IEEE Trans. Nucl. Sci. 38, p. 1101, Dec. (1991).
16. R.E. Stahlbush, A.H. Edwards, D.L. Griscom, and B.J. Mrstik, “Post-Irradiation Cracking of H2 and Formation of Interface States in MOSFETs”, submitted to J. Appl. Phys., (1992).
17. D.B. Brown and N.S. Saks, “Time-dependence of Radiation-Induced Interface Trap Formation in Metal-Oxide-Semiconductor Devices as a Function of Oxide Thickness and Applied Field”, J. Appl. Phys. 70, p. 3734, Oct. (1991).
18. N.S. Saks and D.B. Brown, “The Role of Hydrogen in Interface Trap Creation by Radiation in MOS Devices–A Review”, to be published in The Physics and Chemistry of SiO2 and the Si-SiO 2 Interface, edited by C.R. Helms and B.E. Deal, Plenum Press, (1992).
19. P.S. Winokur, J.M. McGarrity, and H.E. Boesch, Jr., “Dependence of Interface State Build-up on Hole Generation and Transport in Irradiated MOS Devices”, IEEE Trans. Nucl. Sci. NS-23, p. 1580, Dec. (1976).
20. R. Gale, F.J. Feigl, C.W. Magee, and D.R. Young, “Hydrogen Migration under Avalanche Injection of Electrons in Si Metal-Oxide-Semiconductor Capacitors”, J. Appl. Phys. 54, p. 6938, Dec. (1983).
21. A.D. Marwick and D.R. Young, “Measurements of Hydrogen in Metal-Oxide-Semiconductor Structures using Nuclear Reaction Profiling”, J. Appl. Phys. 63, p. 2291, April (1988).
22. S.M. Myers, “Interaction of Deuterium Gas with Dry SiO2 on Si: An Ion-Beam Study”, J. Appl. Phys. 61, p. 5428, June (1987).
23. N.S. Saks, C.M. Dozier, and D.B. Brown, “Time Dependence of Interface Trap Formation in MOSFETs Following Pulsed Irradiation”, IEEE Trans. Nucl. Sci. 35, p. 1168, Dec. (1988).
24. N.S. Saks, M.G. Ancona, and W. Chen, “Interface Trap Measurements using 3-Level Charge Pumping”, Insulating Films on Semiconductors 1991”, edited by W. Eccleston and M. Uren, Adam Hilger Press, p. 139 (1991).
25. H.E. Boesch, Jr., “Time-Dependent Interface Trap Effects in MOS Devices”, IEEE Trans. Nucl. Sci. 35, p. 1160, (1988).
26. P.U. Kenkare and S.A. Lyon, “Relationship between Trapped Holes, Positive Ions, and Interface States in Irradiated Si-SiO 2 Structures”, Appl. Phys. Lett. 55, p. 2330, (1989).
27. S.K. Lai, “Interface Trap Generation in Silicon Dioxide when Electrons are Captured by Trapped Holes”, J. Appl. Phys. 54, p. 2540, (1983).
28. N.S. Saks and D.B. Brown, “Interface Trap Formation via the Two-Stage H+ Process”, IEEE Trans. Nucl. Sci. 36, p. 1848, (1989).
29. C.H. Seager and D.S. Ginley, “Studies of the Hydrogen Passivation of Silicon Grain Boundaries”, J. Appl. Phys. 52, p. 1050, (1981).
30. H. Scher and E.W. Montroll, “Anomalous Transit-Time Dispersion in Amorphous Solids”, Phys. Rev. B12, p. 2455 (1975).
31. F.B. McLean and G.A. Ausman, “Simple Approximate Solutions to Continuous-Time-Random-Walk Transport”, Phys. Rev. B15, p. 1052 (1977).
32. F.B. McLean, H.E. Boesch, Jr., and T.R. Oldham, “Electron-Hole Generation, Transport, and Trapping in SiO2”, in Ionizing Radiation Effects in MOS Devices and Circuits, ed. T.P. Ma and P.V. Dressendorfer, John Wiley & So ns (1989), Chapter 3 and references therein.
33. For a recent survey of dispersive transport and relaxation across several different fields, see Proceedings of the International Discussion Meeting on Relaxations in Complex Systems, ed. K.L. Ngai and G.B. Wright, in J. Non-Cryst. Solids 131– 133 133 (1991).
34. R.W. Rendell, to be published.
35. C.P. Flynn and A.M. Stoneham, “Quantum Theory of Diffusion with Application to Light Interstitials in Metals”, Phys. Rev. Bl, p. 3966, (1970).
36. A.M. Stoneham, “Non-Classical Diffusion Processes”, J. Nucl. Mater. 69 & 70, p. 109 (1978).
37. H.E. Boesch, Jr., F.B. McLean, J.M. McGarrity, and P.S. Winokur, “Enhanced Flatband Voltage Recovery in Hardened Thin MOS Capacitors”, IEEE Trans. Nucl. Sci. NS-25, p. 1239, Dec. (1978).
38. K.L. Ngai, R.W. Rendell, and H. Jain, “Anomalous Isotope-Mass Effect in Lithium Borate Glasses”, Phys. Rev. B30, p. 2133 (1984).
39. K.L. Ngai, X. Huang, and F.-S. Liu, “Small Polaron Hopping without Trap Participation in Dispersive Transport in SiO 2 of MOS Structures”, The Physics of MOS Insulators, ed. G. Lucovsky, S.T. Pantelides, and F.L. Galeener, Pergamon Press (1980), p. 44.