Determination of Interface Trap Capture Cross Sections Using Three-Level Charge Pumping

IEEE Electron Device Letters

Volumn 11, Issue 8, 1990, Pages 339-341

  Saks, Nelson S ^a   Ancona, Mario G ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS - CHARGE; TRANSISTORS, FIELD EFFECT;

CHARGE PUMPING (CP) TECHNIQUE; TRAP PARAMETERS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025477977     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.57927     Document Type: Article

References (10)

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2. W. L. Tseng, “A new charge pumping method of measuring Si-SiO2 interface states,” J. Appl. Phys., vol. 62, p. 591, July 1987.
3. F. Hofmann and W. H. Krautschneider, “A simple technique for determining the interface trap distribution of submicron MOS transistors by the charge pumping method,” J. Appl. Phys., vol. 65, p. 1358, Feb. 1989.
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6. U. Cilingiroglu, “Charge-pumping spectroscopy with pulsed interface probing,” IEEE Trans. Electron Devices, vol. 37, p. 267, Jan. 1990.
7. E. H. Nicollian and A. Goetzberger, “The Si-SiO2 interface-Electrical properties as determined by the metal-insulator-silicon conductance technique,” Bell Syst. Tech. J., p. 1055, July-Aug. 1967.
8. H. Deuling, E. Klausman, and A. Goetzberger, “Interface states in Si-SiO2 interfaces,” Solid-State Electron., vol. 15, p. 559, 1969.
9. H. S. Haddara and M. El-Sayed, “Conductance technique in MOSFETs: Study of interface trap properties in the depletion and weak inversion regimes,” Solid-State Electron., vol. 31, p. 1289, 1988.
10. J. A. Cooper, Jr. and R. J. Schwartz, “Electrical characteristics of the Si-SiO2 interface near midgap and in weak inversion,” Solid-State Electron., vol. 17, p. 641, 1974.