Characterization of Si-SiO2 interface states: Comparison between different charge pumping and capacitance techniques

Journal of Applied Physics

Volumn 74, Issue 6, 1993, Pages 3932-3935

  Autran, J L ^a   Seigneur, F ^a   Plossu, C ^a   Balland, B ^a  

^a CNRS   (France)

Author keywords

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EID: 36449007618     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.354493     Document Type: Article

References (14)