Post-irradiation effects in a rad-hard technology

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 1, 1996, Pages 826-830

  Chabrerie, Christian ^a   Musseau, Olivier ^a   Flament, Olivier ^a   Leray, Jean Luc ^a   Boudenot, Jean Claude ^a   Shipman, Benoît ^a   Callewaert, Hervé ^a  

^a CEA DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GATES (TRANSISTOR); PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATION HARDENING;

CHARGE DETRAPPING; ISOCHRONAL ANNEALING; ISOTHERMAL ANNEALING;

CMOS INTEGRATED CIRCUITS;

EID: 0030166371     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.510720     Document Type: Article

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